February 11, 2017 Preprint Open Access

Pancheri, L.; et al.

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  <identifier identifierType="DOI">10.15161/oar.it/75856</identifier>
  <creators>
    <creator>
      <creatorName>Pancheri, L.</creatorName>
      <givenName>L.</givenName>
      <familyName>Pancheri</familyName>
    </creator>
    <creator>
      <creatorName>et al.</creatorName>
    </creator>
  </creators>
  <titles>
    <title>First prototypes of two-tier avalanche pixel sensors for particle detection</title>
  </titles>
  <publisher>INFN Open Access Repository</publisher>
  <publicationYear>2017</publicationYear>
  <subjects>
    <subject>AAM</subject>
    <subject>20152019VQR</subject>
  </subjects>
  <dates>
    <date dateType="Issued">2017-02-11</date>
  </dates>
  <language>en</language>
  <resourceType resourceTypeGeneral="Text">Preprint</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://www.openaccessrepository.it/record/75856</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="Compiles">10.1016/j.nima.2016.06.094</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.15161/oar.it/75855</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://www.openaccessrepository.it/communities/infn</relatedIdentifier>
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  <rightsList>
    <rights rightsURI="https://creativecommons.org/licenses/by/4.0/">Creative Commons Attribution 4.0</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
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  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150 nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16 pixel array with 50 μm X 75 μm pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 X 45μm² have a median dark count rate of 3 kHz at 3.3 V excess bias and a breakdown voltage non-uniformity lower than 20 mV.&lt;/p&gt;</description>
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