February 11, 2017 Preprint Open Access

Pancheri, L.; et al.

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{
  "DOI": "10.15161/oar.it/75856", 
  "abstract": "<p>In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150 nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48\u00d716 pixel array with 50 \u03bcm X 75 \u03bcm pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 X 45\u03bcm\u00b2 have a median dark count rate of 3 kHz at 3.3 V excess bias and a breakdown voltage non-uniformity lower than 20 mV.</p>", 
  "author": [
    {
      "family": "Pancheri, L."
    }, 
    {
      "family": "et al."
    }
  ], 
  "id": "75856", 
  "issued": {
    "date-parts": [
      [
        2017, 
        2, 
        11
      ]
    ]
  }, 
  "language": "eng", 
  "title": "First prototypes of two-tier avalanche pixel sensors for particle detection", 
  "type": "article"
}