February 11, 2017 Preprint Open Access

Pancheri, L.; et al.

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  <dc:creator>Pancheri, L.</dc:creator>
  <dc:creator>et al.</dc:creator>
  <dc:date>2017-02-11</dc:date>
  <dc:description>In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150 nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16 pixel array with 50 μm X 75 μm pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 X 45μm² have a median dark count rate of 3 kHz at 3.3 V excess bias and a breakdown voltage non-uniformity lower than 20 mV.</dc:description>
  <dc:identifier>https://www.openaccessrepository.it/record/75856</dc:identifier>
  <dc:identifier>10.15161/oar.it/75856</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>doi:10.1016/j.nima.2016.06.094</dc:relation>
  <dc:relation>doi:10.15161/oar.it/75855</dc:relation>
  <dc:relation>url:https://www.openaccessrepository.it/communities/infn</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/</dc:rights>
  <dc:subject>AAM</dc:subject>
  <dc:subject>20152019VQR</dc:subject>
  <dc:title>First prototypes of two-tier avalanche pixel sensors for particle detection</dc:title>
  <dc:type>info:eu-repo/semantics/preprint</dc:type>
  <dc:type>publication-preprint</dc:type>
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